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Gallium Arsenide Gaas Wafer Si-doped 2 3 4 Inch

Posted at: Offers to Sell and Export | Posted on: Thu 02 Sep, 2010 3:26 am |
 
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Products Photos CatalogGallium Arsenide Gaas Photos Catalog




Gallium Arsenide (GaAs) Wafer Si-Doped 2 3 4

Conduct Type S-C-N, VGF growth, EPI-Ready



Diameter

50.7+/- 0.2, 76.2+/-0.3, 100+/-0.3

Orientation (100)0+/-0.50

Thickness 350+/-25um, 625+/-25um

Primary Flat Length 16+/-1mm, 22+/-2 mm

Secondary Flat Length 8+/-1mm, 16+/-2mm

CC 0.4E18-4E18 /cm3, 1E17-2.0E17

Resistivity 0.8x10-3-9x10-3, 0.05-0.005 Ohm.cm

Mobility >1000 cm2/v.s, 2000-3500 cm2/v.s

EPD 1000/cm2, 10, 000/cm2 max

Surface P/E, TTV 10um max, Particle Count <50 (>0.3m)

Single wafer packing, carton box outside



Company Contact:

No member photo
Contact Name: Sheldon
Company Name: Sichuan Western Minmetals Co., Ltd
Email: Email
Tel: (86) 28 8518 7251
Fax: (86) 28 8518 4110
Street Address: C-5-C, No.2
Tongzilin North Road, Chengdu,
Sichuan, China 610041
Website: http://www.matltech.com
Member name: swmc1234
Country: China-CN China
Member Since: 02 September 2010
Total Leads: 40 swmc1234 Import Export Business Leads
Business focus: 5n-7n Purity Antimony, Tellurium, Arsenic, Cadmium, Gallium, Indium, Bismuth, Zinc, Tin, Phosphorus, Sulfur, Selenium, Tellurium Oxide, Antimony Oxide
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