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Gallium Arsenide Gaas Wafer Un-doped Semi-insulating 2 3 Inch

Posted at: Offers to Sell and Export | Posted on: Thursday 2 September 2010 3:27 am | Poster last visit: Sunday 5 September 2010 |

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Product Description:

Gallium Arsenide (GaAs) Wafer Un-doped Semi-insulating 2” 3”

Conduct Type N, VGF growth, EPI-Ready



Diameter

50.8+/-0.2 mm, 76.2+/-0.3 mm

Thickness350+/-25µm, 625+/-25um

Orientation (100)0+/-0.50

Primary Flat Length16+/-1, 22+/-2mm

Secondary Flat length7+/-1, 12+/-2mm

Resistivity 1×107 Ohm.cm

Mobility >5000 cm2/v.s EPD<10000 /cm2

TTV/BOW/Warp 10um, 15µm max

Edge 0.25 mmR, Surface P/P

Single wafer packing, carton box outside



Company Contact:

No member photo
Contact Name: Sheldon
Company Name: Sichuan Western Minmetals Co., Ltd
Email: Email
Tel: (86) 28 8518 7251
Fax: (86) 28 8518 4110
Street Address: C-5-C, No.2
Tongzilin North Road, Chengdu,
Sichuan, China 610041
Website: http://www.matltech.com
Member name: swmc1234
Country: China-CN China
Member Since: 02 September 2010
Total Leads: 40 swmc1234 Import Export Business Leads
Business focus: 5n-7n Purity Antimony, Tellurium, Arsenic, Cadmium, Gallium, Indium, Bismuth, Zinc, Tin, Phosphorus, Sulfur, Selenium, Tellurium Oxide, Antimony Oxide
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