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Part number hy5du121622dtp
BRAND Hynix Semiconductor [Hynix]
Date code 12+
Summary DDR, TSOP56, CMOS
Description as follow:
The HY5DU121622DTP-D43 is a 536, 870, 912-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
Absolute maximum ratings: (1)Operating Temperature (Ambient): 0 ~ 70 ℃; (2)Storage Temperature: -55 ~ 150 ℃; (3)Voltage on VDD relative to VSS: -1.0 ~ 3.6 V; (4)Voltage on VDDQ relative to VSS: -1.0 ~ 3.6 V; (5)Voltage on inputs relative to VSS: -1.0 ~ 3.6 V; (6)Voltage on I/O pins relative to VSS: -0.5 ~3.6 V; (7)Output Short Circuit Current: 50 mA; (8)Soldering Temperature . Time: 260·10 ℃·Sec.
Features: (1)VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333); (2)VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR400, 400Mbps/pin product and 500Mbps/pin product ); (3)All inputs and outputs are compatible with SSTL_2 interface; (4)Fully differential clock inputs (CK, /CK) operation; (5)Double data rate interface; (6)Source synchronous - data transaction aligned to bidirectional data strobe (DQS); (7)x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O.
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