Excellent Integrated System LIMITED (EIS LIMITED), Established in 1991, is a professional independent
stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question, please email us:
Part number hy5du121622dtp
BRAND Hynix Semiconductor [Hynix]
Date code 12+
Summary DDR, TSOP56, CMOS
Description as follow:
The HY5DU121622DTP-D43 is a 536, 870, 912-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
Absolute maximum ratings: (1)Operating Temperature (Ambient): 0 ~ 70 ℃; (2)Storage Temperature: -55 ~ 150 ℃; (3)Voltage on VDD relative to VSS: -1.0 ~ 3.6 V; (4)Voltage on VDDQ relative to VSS: -1.0 ~ 3.6 V; (5)Voltage on inputs relative to VSS: -1.0 ~ 3.6 V; (6)Voltage on I/O pins relative to VSS: -0.5 ~3.6 V; (7)Output Short Circuit Current: 50 mA; (8)Soldering Temperature . Time: 260·10 ℃·Sec.
Features: (1)VDD, VDDQ = 2.3V min ~ 2.7V max (Typical 2.5V Operation +/- 0.2V for DDR266, 333); (2)VDD, VDDQ = 2.4V min ~ 2.7V max (Typical 2.6V Operation +0.1/- 0.2V for DDR400, 400Mbps/pin product and 500Mbps/pin product ); (3)All inputs and outputs are compatible with SSTL_2 interface; (4)Fully differential clock inputs (CK, /CK) operation; (5)Double data rate interface; (6)Source synchronous - data transaction aligned to bidirectional data strobe (DQS); (7)x16 device has two bytewide data strobes (UDQS, LDQS) per each x8 I/O.