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Part number 2sc1946a
BRAND Mitsubishi Electric Semiconductor [MES]
Date code 2011+rohs
Summary silicon NPN epitaxial planar type, transistor, 35V, 7A, 3W, high power gain, low thermal resistance
Description as follow:
The 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. The applications of the device include 25 watts output power amplifiers in VHF band mobile radio applications.
2SC1946A absolute maximum ratings: (1)VCBO, collector: 35V; (2)VEBO, emitter to base voltage: 4V; (3)VCEO, collector to emitter voltage: 17V; (4)IC, collector current: 7A; (5)PC, collector dissipation: 3W when Ta=25℃; 50W when Tc=25℃; (6)Tj, junction temeprature: 175℃; (7)Tstg, storage temperature: -55 to 175℃.
2SC1946A features: (1)high power gain: Gpe≥10dB @ VCC=13.5V, Po=30W, f=175MHz; (2)emitter ballasted construction and gold metallization for high reliability and good performances; (3)low thermal resistance ceramic package with flange; (4)ability of withstanding more than 20:1 load VSWR when operated at VCC=15.2V, Po=30W, f=175MHz; (5)equivalent input/output impedance at rated operating conditions: Zin=0.65+j1.4Ω; Zout=1.9+j0.75Ω.