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Hello visitor from
USA - 83 visiting from 80 USA 1 India 1 Singapore 1 UK
Sell K4t51163qg-hce6 Samsung Semiconductor, Ddr2 Sdram, 84 Fbg
Posted at: Offers to Sell and Export | Posted on: Friday 12 October 2012 8:14 am | Poster last visit: Friday 26 July 2013 |
Product Description:
Excellent Integrated System LIMITED (EIS LIMITED), Established in 1991, is a professional independent
stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question, please email us:
Part number k4t51163qg-hce6
BRAND Samsung semiconductor
Packaging bga
Date code 10+
PRICE 1~5usd
Summary DDR2 SDRAM, 32Mx16, 84 FBG
Description as follow:
The K4T51163QG-HCE6 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
Parametrics
Absolute maximum DC ratings: (1)VDD, Voltage on VDD pin relative to VSS: - 1.0 V ~ 2.3 V ; (2)VDDQ, Voltage on VDDQ pin relative to VSS: - 0.5 V ~ 2.3 V ; (3)VDDL, Voltage on VDDL pin relative to VSS: - 0.5 V ~ 2.3 V ; (4)VIN, VOUT Voltage on any pin relative to VSS: - 0.5 V ~ 2.3 V ; (5)TSTG, Storage Temperature: -55 to +100℃.
Features
Features: (1)JEDEC standard 1.8Vą0.1V Power Supply; (2)VDDQ = 1.8Vą0.1V; (3)200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin; (4)4 Banks; (5)Posted CAS; (6)Programmable CAS Latency: 3, 4, 5, 6; (7)Programmable Additive Latency: 0, 1, 2, 3, 4, 5; (8)Write Latency(WL) = Read Latency(RL) -1; (9)Burst Length: 4, 8(Interleave/nibble sequential); (10)Programmable Sequential / Interleave Burst Mode; (11)Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature); (12)Off-Chip Driver(OCD) Impedance Adjustment; (13)On Die Termination; (14)Special Function Support: PASR(Partial Array Self Refresh); 50ohm ODT; High Temperature Self-Refresh rate enable; (15)Average Refresh Period 7.8us at lower than TCASE 85℃, 3.9us at 85℃ < TCASE ≤ 95 ℃; (16)All of products are Lead-free, Halogen-free, and RoHS compliant.
Diagrams
Company Contact:
Contact Name: John
Company Name: Excellent Integrated System Limited (eis Limited)
Email:
Tel: 00852-30777742
Fax: 00852-30777843
Street Address: Rm 906, Workingberg
Comm Bldg, 41-47 Marble Rd, Hong Kong
Member name: EISLIMITED
Country:
Hong Kong
Member Since: 29 August 2012
Total Leads: 537 EISLIMITED Import Export Business Leads
Business focus: Electronic Components, Active Component, Integrated Circuit, Semiconductor, Chips
Chat:
Verify: Safe Import Export Tips
stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question, please email us:
Part number k4t51163qg-hce6
BRAND Samsung semiconductor
Packaging bga
Date code 10+
PRICE 1~5usd
Summary DDR2 SDRAM, 32Mx16, 84 FBG
Description as follow:
The K4T51163QG-HCE6 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed doubledata-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
Parametrics
Absolute maximum DC ratings: (1)VDD, Voltage on VDD pin relative to VSS: - 1.0 V ~ 2.3 V ; (2)VDDQ, Voltage on VDDQ pin relative to VSS: - 0.5 V ~ 2.3 V ; (3)VDDL, Voltage on VDDL pin relative to VSS: - 0.5 V ~ 2.3 V ; (4)VIN, VOUT Voltage on any pin relative to VSS: - 0.5 V ~ 2.3 V ; (5)TSTG, Storage Temperature: -55 to +100℃.
Features
Features: (1)JEDEC standard 1.8Vą0.1V Power Supply; (2)VDDQ = 1.8Vą0.1V; (3)200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin; (4)4 Banks; (5)Posted CAS; (6)Programmable CAS Latency: 3, 4, 5, 6; (7)Programmable Additive Latency: 0, 1, 2, 3, 4, 5; (8)Write Latency(WL) = Read Latency(RL) -1; (9)Burst Length: 4, 8(Interleave/nibble sequential); (10)Programmable Sequential / Interleave Burst Mode; (11)Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature); (12)Off-Chip Driver(OCD) Impedance Adjustment; (13)On Die Termination; (14)Special Function Support: PASR(Partial Array Self Refresh); 50ohm ODT; High Temperature Self-Refresh rate enable; (15)Average Refresh Period 7.8us at lower than TCASE 85℃, 3.9us at 85℃ < TCASE ≤ 95 ℃; (16)All of products are Lead-free, Halogen-free, and RoHS compliant.
Diagrams
Company Contact:
Contact Name: John
Company Name: Excellent Integrated System Limited (eis Limited)
Email:
Tel: 00852-30777742
Fax: 00852-30777843
Street Address: Rm 906, Workingberg
Comm Bldg, 41-47 Marble Rd, Hong Kong
Member name: EISLIMITED
Country:
Hong KongMember Since: 29 August 2012
Total Leads: 537 EISLIMITED Import Export Business Leads
Business focus: Electronic Components, Active Component, Integrated Circuit, Semiconductor, Chips
Chat:
Verify: Safe Import Export Tips
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