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Part number k9f2g08u0a-pcb0
BRAND Samsung semiconductor [SAMSUNG]
Date code 2010+rohs!
Summary flash memory, TSOP, 3.60V, 64Byte, 5mA, 3.60V, 25ns, Memory Cell Array
Description as follow:
The K9F2G08U0A-PCB0 is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation of the K9F2G08U0A-PCB0 can be performed in typical 200μs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a(128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte.
K9F2G08U0A-PCB0 absolute maximum ratings: (1)VCC: -0.6 to +2.45 -0.6 to +4.6; (2)VIN: -0.6 to +2.45 -0.6 to +4.6 V; (3)VI/O: -0.6 to Vcc + 0.3 (< 2.45V) -0.6 to Vcc + 0.3 (< 4.6V); (4)TBIAS: -10 to +125℃; (5)Storage Temperature, TSTG: -65 to +150℃; (6)Short Circuit Current, IOS: 5mA.
K9F2G08U0A-PCB0 features: (1)Voltage Supply 2.70V ~ 3.60V; (2)Organization. Memory Cell Array : (256M + 8M) x 8bit. Data Register : (2K + 64) x 8bit; (3)Automatic Program and Erase. Page Program : (2K + 64)Byte. Block Erase : (128K + 4K)Byte; (4)Page Read Operation. Page Size : (2K + 64)Byte. Random Read : 25μs(Max.). Serial Access : 25ns(Min.).