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Si2301bds-t1-e3 Vishay P-channel 2.5-v G-s Mosfet, Low Power Dissipation
Posted at: Offers to Sell and Export | Posted on: Friday 29 August 2014 2:26 pm | Poster last visit: Tuesday 25 November 2014 |
Product Category: Main
» Electronic Components and Supplies
» Printed circuits and integrated circuits and microassemblies
» Integrated circuits
» Programmable logic integrated circuit
» Si2301bds-t1-e3 Vishay P-channel 2.5-v G-s Mosfet, Low Power Dissipation
Product Description:
Part Number: SI2301BDS-T1-E3 Vishay P-Channel 2.5-V (G-S) MOSFET, -20 V, ±3.2 A, 1.7 W, Low Power Dissipation
Description:
The
SI2301BDS-T1-E3 is a P-Channel 2.5-V (G-S) MOSFET.
Parametrics
SI2301BDS-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: -20 V; (2)Gate-Source Voltage VGS: ±8 V; (3)Continuous Drain Current (TJ = 175℃) TA = 25℃ ID: ±3.7 A; TA = 70℃ ID: ±3.2 A; (4)Pulsed Drain Current IDM: 25 A; (5)Continuous Source Current (Diode Conduction) IS: 2 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.4 W; TA = 70℃ PD: 1.7 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 175 ℃.
Features
SI2301BDS-T1-E3 specifications: (1)Drain-Source Breakdown Voltage V(BR)DSS: min=-20 V; (2)Gate-Threshold Voltage VGS(th): min=-0.45 V, max=-0.95 V; (3)Gate-Body Leakage IGSS: ±100 nA; (4)Zero Gate Voltage Drain Current IDSS: max=-1μA; (5)VDS = -20 V, VGS = 0 V, TJ = 55C -10; (6)On State Drain Currenta ID(on): min=-6A; (7)Drain Source On Resistance rDS(on): typ=0.080 Ω, max=0.100 Ω; (8)Forward Transconductance gfs: typ=6.5 S; (9)Diode Forward Voltage VSD: typ=-0.80 V, max=-1.2 V.
Package Case: New and Original Package
Date Code: 2013+ Rohs
Lead Time / Delivery Time: IN STOCK, SHIP WITHIN 1-3 DAY
RoHS Status: Lead free / RoHS Compliant
Distributor/ Supplier: ICBOND ELECTRONICS LIMITED
Company Contact:
Contact Name: Paul
Company Name: Icbond Electronics Limited
Email: Icbond Electronics Limited
Tel: 00852-28150191
Fax:
Street Address: Unit D, 11/f., Wing
Tat Comm. Bldg., 97 Bonham Strand
East, Sheung Wan
Hk, Hk 999077
Hong Kong
Member name: IcbondElectronicsLimite
Country:
Hong Kong
Member Since: 05 August 2013
Total Leads: 525 IcbondElectronicsLimite Import Export Business Leads
Business focus: Electronic Components, Integrated Circuits, Ic Chips, Semiconductors, Diodes, Capacitors
Chat:
Verify: Safe Import Export Tips
Description:
The
SI2301BDS-T1-E3 is a P-Channel 2.5-V (G-S) MOSFET.
Parametrics
SI2301BDS-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: -20 V; (2)Gate-Source Voltage VGS: ±8 V; (3)Continuous Drain Current (TJ = 175℃) TA = 25℃ ID: ±3.7 A; TA = 70℃ ID: ±3.2 A; (4)Pulsed Drain Current IDM: 25 A; (5)Continuous Source Current (Diode Conduction) IS: 2 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.4 W; TA = 70℃ PD: 1.7 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 175 ℃.
Features
SI2301BDS-T1-E3 specifications: (1)Drain-Source Breakdown Voltage V(BR)DSS: min=-20 V; (2)Gate-Threshold Voltage VGS(th): min=-0.45 V, max=-0.95 V; (3)Gate-Body Leakage IGSS: ±100 nA; (4)Zero Gate Voltage Drain Current IDSS: max=-1μA; (5)VDS = -20 V, VGS = 0 V, TJ = 55C -10; (6)On State Drain Currenta ID(on): min=-6A; (7)Drain Source On Resistance rDS(on): typ=0.080 Ω, max=0.100 Ω; (8)Forward Transconductance gfs: typ=6.5 S; (9)Diode Forward Voltage VSD: typ=-0.80 V, max=-1.2 V.
Package Case: New and Original Package
Date Code: 2013+ Rohs
Lead Time / Delivery Time: IN STOCK, SHIP WITHIN 1-3 DAY
RoHS Status: Lead free / RoHS Compliant
Distributor/ Supplier: ICBOND ELECTRONICS LIMITED
Company Contact:
Contact Name: Paul
Company Name: Icbond Electronics Limited
Email: Icbond Electronics Limited
Tel: 00852-28150191
Fax:
Street Address: Unit D, 11/f., Wing
Tat Comm. Bldg., 97 Bonham Strand
East, Sheung Wan
Hk, Hk 999077
Hong Kong
Member name: IcbondElectronicsLimite
Country:
Hong KongMember Since: 05 August 2013
Total Leads: 525 IcbondElectronicsLimite Import Export Business Leads
Business focus: Electronic Components, Integrated Circuits, Ic Chips, Semiconductors, Diodes, Capacitors
Chat:
Verify: Safe Import Export Tips
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